PART |
Description |
Maker |
2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|20VAR Low Frequency Transistor (60V, 3A) Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc. Rohm CO.,LTD.
|
BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB 60V/7A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB POWER TRANSISTORS(3.0A/60V/30W) POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
ECG130MP ECG152 ECG153 ECG155 ECG153MP ECG159MCP E |
Finger guards Round type - suction side - Adaptation machine-Frame size : 200mm; Surface Finishing: Cation electropainting; Adaptation Machine: San Ace 200(suction side); TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-3VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 7A I(C) | TO-220AB TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1A条一(c)|2 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1 晶体管|晶体管|进步党| 32V的五(巴西)总裁| 1A条一(c)|
|
TE Connectivity, Ltd. Aeroflex, Inc.
|
2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Silicon transistor
|
IRC Advanced Film NEC[NEC]
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
2SK3060 2SK3060-S 2SK3060-Z 2SK3060-ZJ |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263VAR 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 70A条(丁)|63VAR MOS FIELD EFFECT TRANSISTOR
|
NEC
|
2SB1094 2SB1094L 2SB1094M |
Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC Corp.
|
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|